Journal article
Yidong Liu, Yizhou Yang, Dandan Shi, Mingchao Xiao, Lang Jiang, Jianwu Tian, Guanxin Zhang, Zitong Liu, Xisha Zhang, Deqing Zhang
Advances in Materials, 2019
Advances in Materials, 2019
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APA
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Liu, Y., Yang, Y., Shi, D., Xiao, M., Jiang, L., Tian, J., … Zhang, D. (2019). Photo‐/Thermal‐Responsive Field‐Effect Transistor upon Blending Polymeric Semiconductor with Hexaarylbiimidazole toward Photonically Programmable and Thermally Erasable Memory Device. Advances in Materials.
Chicago/Turabian
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Liu, Yidong, Yizhou Yang, Dandan Shi, Mingchao Xiao, Lang Jiang, Jianwu Tian, Guanxin Zhang, Zitong Liu, Xisha Zhang, and Deqing Zhang. “Photo‐/Thermal‐Responsive Field‐Effect Transistor upon Blending Polymeric Semiconductor with Hexaarylbiimidazole toward Photonically Programmable and Thermally Erasable Memory Device.” Advances in Materials (2019).
MLA
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Liu, Yidong, et al. “Photo‐/Thermal‐Responsive Field‐Effect Transistor upon Blending Polymeric Semiconductor with Hexaarylbiimidazole toward Photonically Programmable and Thermally Erasable Memory Device.” Advances in Materials, 2019.
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@article{yidong2019a,
title = {Photo‐/Thermal‐Responsive Field‐Effect Transistor upon Blending Polymeric Semiconductor with Hexaarylbiimidazole toward Photonically Programmable and Thermally Erasable Memory Device},
year = {2019},
journal = {Advances in Materials},
author = {Liu, Yidong and Yang, Yizhou and Shi, Dandan and Xiao, Mingchao and Jiang, Lang and Tian, Jianwu and Zhang, Guanxin and Liu, Zitong and Zhang, Xisha and Zhang, Deqing}
}
Abstract
It is shown that the semiconducting performance of field‐effect transistors (FETs) with PDPP4T (poly(diketopyrrolopyrrole‐quaterthiophene)) can be reversibly tuned by UV light irradiation and thermal heating after blending with the photochromic hexaarylbiimidazole compound (p‐NO2‐HABI). A photo‐/thermal‐responsive FET with a blend thin film of PDPP4T and p‐NO2‐HABI is successfully fabricated. The transfer characteristics are altered significantly with current enhanced up to 106‐fold at VG = 0 V after UV light irradiation. However, further heating results in the recovery of the transfer curve. This approach can be extended to other semiconducting polymers such as P3HT (poly(3‐hexyl thiophene)), PBTTT (poly(2,5‐bis(3‐tetradecylthiophen‐2‐yl)thieno[3,2‐b] thiophene)) and PDPPDTT (poly(diketopyrrolopyrrole‐dithienothiophene)). It is hypothesized that TPIRs (2,4,5‐triphenylimidazolyl radicals) formed from p‐NO2‐HABI after UV light irradiation can interact with charge defects at the gate dielectric–semiconductor interface and those in the semiconducting layer to induce more hole carriers in the semiconducting channel. The application of the blend thin film of PDPP4T and p‐NO2‐HABI is further demonstrated to fabricate the photonically programmable and thermally erasable FET‐based nonvolatile memory devices that are advantageous in terms of i) high ON/OFF current ratio, ii) nondestructive reading at low electrical bias, and iii) reasonably highly stable ON‐state and OFF‐state.